Robert W. Bower
Dr. Bower received his A.B. in Physics (1962) from the University
of California at Berkeley,
M.S.E.E. (1963) and Ph.D. (1973) in Applied Physics from The California
Institute of Technology. He has worked
more than 25 years in industry where he served in a number of capacities
including that of engineer, scientist, Dept. head, division manager, president
and CEO. He has served 15 years as
Professor at the University of California. Dr. Bower has more than 80 journal and
conference papers and 28 patents and the author of chapters in 3 books.
He is currently President of Integrated Vertical Modules,
President and CEO of Device Concept Inc. and Professor Emeritus at the University
of California. IVM is a new venture whose focus is three dimensional,
high density solid structures. Device
Concept Inc. is a consulting firm with focus on semiconductor technology and
patent expertise. 17 law firms have
retained him where he has served as an expert witness in patent litigation
cases. His professional interests
include three-dimensional microstructures, silicon on insulator technology,
semiconductor devices, solid-state sensors and actuators, direct bonding.
Honors and Awards
Distinguished Senior Fellow Award, Physics Department, Queens University, Belfast.
(2003) Granted to Researchers with an
international reputation in areas of research in Physics at Queens
the Alexander von Humboldt Award, April 2001. The Alexander von Humboldt Foundation (AvH) grants Humboldt Research Awards annually to foreign
scholars with internationally recognized academic qualifications. The award is
intended as a lifelong tribute to the past academic accomplishments of award
Presented the Distinguished Alumi Award for year 2001 from the California Institute of
Technology. This award is the
most prestigious honor presented by the Institute.
Elected a member of the National Academy
of Engineering 1999. Dr. Robert W. Bower,
Elected Feb. 16, 1999. Election to the National Academy of
Engineering is among the highest professional distinctions accorded an
In 1997 inducted as a member
of the National Inventors Hall of Fame, for my invention of the
self-aligned-gate ion-implanted MOSFET.
In 1997 the Commerce Department
of the United States Government presented Robert W. Bower with the Ronald H.
Brown American Innovator Award.
Fellow of the IEEE in 1986, "For inventing the self-aligned gate ion
implanted MOSFET and for establishing ion implantation to fabricate
semiconductor integrated circuits”.
Paper selected as the most significant device paper of the
1966 International Electron Device Meeting (IEDM), “Insulated Gate Field Effect
Transistors Fabricated Using the Gate as Source-Drain Mask”.
W. Bower, Louis LeBoeuf and Y. Albert Li,
"Transposed Splitting of Silicon Implanted with Spatially Offset
Distributions of Hydrogen and Boron". Publiblished, Il
Nuovo Cimento Dec
1997, Vol. 19 D, N. 12, pp 1871-1873.
Colinge and Robert W. Bower, Guest Editors
“Silicon-On-Insulator Technology”, Invited Special edition of the MRS
Bulletin Dec. 1998.
- Q.Y.Tong and R. Bower "Recent advances in
Smart-Cut technology" Duke U., Bell Labs and UC Davis, Invited
Special edition MRS Bulletin Dec. 1998.
W. Bower, U. S.-Finland Workshop on Microstructuring
Science and Technology, Hotel Haikko Manor, Porvoo, Finland Aug. 5-7, 1998. Elements of Three
Dimensional Microstructure Technologies.
W. Bower, Fifth International Conference on Solid-State and
Integrated-Circuit Technology, Oct.
21-23, 1998 Beijing, China,
3-Dimensional microelectronic integration. Pp 741-744.
- K.K. Vossough,
R.W. Bower, J-P. Colinge, "Electron field emission from silicon
and polysilicon surfaces",
International Vacuum Microelectronics Conference Technical Digest, p.
156-157, July 6-9, 1999.
- K.K. Vossough,
R.W. Bower, J-P. Colinge, "Electron field emission from polysilicon tips and flat surfaces",
International Vacuum Microelectronics Conference Technical Digest, p.144, July 6-9, 1999.
- Hochbauer, T.; Waiter, K.C.; Sohwarz,
R.B.; Nastasi, M.A.; Bower, R.W.; Ensinger, W.A. “The influence of
boron ion implantation on hydrogen blister formation in n-type silicon.”
Journal of Applied Physics, vol.86, (no.8), AIP, 15 Oct. 1999. p.4176
- Y. A.
Li & R. W. Bower, “Surface Conditions and Morphology of Hydrogen Ion
Cut Low Temperature Bonded Thin Film Layers”, Japanese Journal of Applied
Physics. Part 1, No. 1, January
- K.K. Vossough,
R.W. Bower, J-P. Colinge, "Electron field emission from polycrystalline silicon tips", J. of Vac. Sci. Tech. B, Accepted
for Publication Jan. 2000.
- R. R. D. Verda, C. J. Maggiore, J. R. Tesmer, A. Misra, M. A. Nastasi, and R.
W. Bower, “Depth Profiling of
Hydrogen in Crystalline Silicon using Elastic Recoil Detection Analysis”,
Accepted for publication in Nuclear Instruments and Methods in Physics,
2001, Research, Section B: Beam
Interactions with Materials and Atoms.
- R. D. Verda, J. R. Tesmer, C. J. Maggiore, M. A. Nastasi, and
R. W. Bower, "Geometric considerations relevant to hydrogen depth
profiling by reflection elastic recoil detection analysis” , Accepted for
publication in Nuclear Instruments and Methods in Physics, 2001, Research,
Section B: Beam Interactions with
Materials and Atoms.
13. Verda RD, Tesmer JR, Nastasi M, Bower RW. An energy spread correction for depth profiling by elastic
recoil detection analysis. [Journal Paper] Nuclear
Instruments & Methods in Physics Research Section B-Beam Interactions with
Materials & Atoms, vol.187, no.3, March 2002, pp.383-92. Publisher: Elsevier,
14. Verda RD, Tesmer JR, Nastasi M, Bower RW. Accurate
hydrogen depth profiling by reflection elastic recoil detection analysis.
[Conference Paper] Elsevier. Nuclear Instruments & Methods in Physics
Research Section B-Beam Interactions with Materials & Atoms, vol.190, May
2002, pp.419-22. Netherlands.
- R. W. Bower and M. S. Ismail. ALIGNED WAFER BONDING. Patent U.S. 5,226,118, issued August 17, 1993.
- R. W. Bower and M. S. Ismail. DIGITAL PRESSURE SWITCH FORMED BY
ALIGNED WAFER BONDING. Patent U.S.
5,294,760, issued March 15, 1994.
- R. W. Bower and M. S. Ismail. NITROGEN BASED LOW TEMPERATURE DIRECT
BONDING. Filed June 23, 1992, Issued April 2, 1996, patent U.
- Robert W. Bower, Transposed Split of Ion Cut
Materials, Provisional Filed Dec.
31, 1998, Issued February
12, 2002, patent U. S.