100 GHz Integrated CMOS Passive Imager with >100MV/W
Q. J. Gu, Z. Xu, H.-Y. Jian, A. Tang, M.-C. F. Chang, C.-Y.
Huang, and C.-C. Nien, "A 100 GHz Integrated CMOS Passive
Imager with >100MV/W responsivity, 23fW/Hz NEP,"
IET Electronics Letters, vol. 47, issue 9, pp. 544-545,
2011, Featured Paper
This CMOS passive imager integrates LNA, Dicke switch,
detector and baseband Programmable Gain Amplifier (PGA) in a
single chip, and achieves the NEP of /
without/with Dicke switch, responsivity >100MV/W. It also
noise-equivalent temperature difference
(NETD) in 30 ms integration time.
200GHz CMOS Amplifier
working close to Device fT
Z. Xu, Q. J. Gu, and
M. C. Frank Chang,
"A 200GHz CMOS Amplifier working close to Device fT,"
IET Electronics Letters, vol. 47, issue. 11, pp.
10Gb/s/pin Low-Power Interconnect Methods for 3D ICs
Q. Gu, Z. Xu, D.
Huang, T. LaRocca, N. Wang, and M.-C. F. Chang,
Low Power V-Band CMOS Frequency Divider with Wide Locking
Range and Accurate Quadrature Output Phases," IEEE
Journal of Solid-State Circuits, pp. 991-998, Apr. 2008
Q. J. Gu,
H.-Y. Jian, Z. Xu, Y.-C. Wu, F. Chang,
and Y.-K. Chen, "CMOS
Prescaler(s) with Maximum 208GHz Dividing Speed and 37GHz
Time-Interleaved Dual-Injection Locking Range," IEEE TCAS-II,
vol.58, no.7, pp. 393-397, July 2011
Q. J. Gu,
Y.-C. Wu, H.-Y. Jian, F. Wang, and M. C. Frank Chang,
Integrated Frequency Synthesizer for 81-86GHz Satellite
Communications in 65nm CMOS," IEEE RFIC Symposium,
pp. 57-60, May 2010
Q. J. Gu,
Xu, H.-Y. Jian,
X. Xu, F.
Chang, W. Liu, and H. Fetterman, "Generating Terahertz
Signals in 65nm CMOS with Negative-Resistance Resonator
Boosting and Selective Harmonic Suppression," IEEE
Symposium on VLSI Circuit, pp. 109-110, June 2010
Two capacitive coupling methods are used in creating
low-power and high-bandwidth vertical (inter-tier)
interconnects in 3DIC: UWB impulse-shaping interconnect
(UII) and RF interconnect (RFI). Both
interconnects are implemented in MIT-Lincoln Lab 0.18um CMOS 3DIC to realize 10Gb/s/pin and 11Gb/s/pin
transmission bandwidths, respectively, with 2.7mW/pin and
4.35mW/pin power consumption.